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Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions

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===Comparison of the two stylus profilers, the optical profiler and the AFM===
===Comparison of the two stylus profilers, the optical profiler and the AFM===
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!
![[Specific Process Knowledge/Characterization/Profiler#Dektak_8_stylus_profiler|Dektak 8 stylus profiler]]
![[Specific Process Knowledge/Characterization/Profiler#Dektak XTA_new_stylus_profiler|Dektak XTA_new stylus profiler]]
![[Specific Process Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar)|Optical Profiler (Sensofar)]]
![[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|Nanoman]]
|- valign="top"
|'''General description'''
|Profiler for measuring micro structures. Can do wafer mapping and stress measurements.
|Profiler for measuring micro structures. Can do wafer mapping and stress measurements.
|3D Profiler for measuring micro structures. Can do wafer mapping.
|AFM for measuring nanostructures and surface roughness
|-valign="top"
|'''Substrate size'''
|up to 8"
|up to 6"
|Up to more than 6"
|6" or less
|-valign="top"
|'''Max. scan range xy'''
|Line scan x: 50µm to 200mm
|Line scan x: 50µm to 55mm in one scan. Maximum scan lenght with stiching 200mm.
|Depending on the objective:
*One view: 127µmX95µm to 1270µmX955µm
*Stitching: In principel a hole 6" wafer (time consuming)
|90 µm square
|-valign="top"
|'''Max. scan range z'''
|50Å to 1mm
|50Å to 1mm
|Depending on the objective and Z resolution:
*94.4µm ->9984µm
|1 µm (can go up to 5 µm under special settings)
|-valign="top"
|'''Resolution xy'''
|down to 0.067 µm
|down to 0.003 µm
|Depending on the objective:
*0.5µm -> 5µm
|Depending on scan size and number of samples per line and number of lines - accuracy better than 2%
|-valign="top"
|'''Resolution z'''
|1Å, 10Å, 40Å or 160Å
|1Å, 10Å, 80Å or 160Å
|Depending on measuring methode:
*PSI down to 0.01 nm
*VSI down to 1 nm
*Confocal (depending on objective): 1nm -> 50nm
|<1Å - accuracy better than 2%
|- valign="top"
|'''Max. scan depth [µm] (as a function of trench width W''')
|1.2*(W[µm]-5µm)
|1.2*(W[µm]-5µm)
|Depending on material and trench width:
*Somewhere between 1:1 and 1:12
|~1:1 with standard cantilever.
|-valign="top"
|'''Tip radius'''
|5 µm 45<sup>o</sup> cone
|5 µm 45<sup>o</sup> cone
|No tip - using light
*Blue monochromatic LED: 460nm
*White broadband LED: 550nm
|<12 nm on standard cantilever
|-valign="top"
|'''Stress measurement'''
|Can be done
|Can be done
|No stress calculation capability
|Cannot be done
|-valign="top"
|'''Surface roughness'''
|Can be done on a line scan
|Can be done on a line scan
|Can be done on a line or an area
|Can be done on a selected surface area
|-
|}


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