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| ===Comparison of the two stylus profilers, the optical profiler and the AFM=== | | ===Comparison of the two stylus profilers, the optical profiler and the AFM=== |
| {| border="2" cellspacing="0" cellpadding="4" align="center"
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| !
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| ![[Specific Process Knowledge/Characterization/Profiler#Dektak_8_stylus_profiler|Dektak 8 stylus profiler]]
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| ![[Specific Process Knowledge/Characterization/Profiler#Dektak XTA_new_stylus_profiler|Dektak XTA_new stylus profiler]]
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| ![[Specific Process Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar)|Optical Profiler (Sensofar)]]
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| ![[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|Nanoman]]
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| |- valign="top"
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| |'''General description'''
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| |Profiler for measuring micro structures. Can do wafer mapping and stress measurements.
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| |Profiler for measuring micro structures. Can do wafer mapping and stress measurements.
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| |3D Profiler for measuring micro structures. Can do wafer mapping.
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| |AFM for measuring nanostructures and surface roughness
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| |-valign="top"
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| |'''Substrate size'''
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| |up to 8"
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| |up to 6"
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| |Up to more than 6"
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| |6" or less
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| |-valign="top"
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| |'''Max. scan range xy'''
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| |Line scan x: 50µm to 200mm
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| |Line scan x: 50µm to 55mm in one scan. Maximum scan lenght with stiching 200mm.
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| |Depending on the objective:
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| *One view: 127µmX95µm to 1270µmX955µm
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| *Stitching: In principel a hole 6" wafer (time consuming)
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| |90 µm square
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| |-valign="top"
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| |'''Max. scan range z'''
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| |50Å to 1mm
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| |50Å to 1mm
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| |Depending on the objective and Z resolution:
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| *94.4µm ->9984µm
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| |1 µm (can go up to 5 µm under special settings)
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| |-valign="top"
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| |'''Resolution xy'''
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| |down to 0.067 µm
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| |down to 0.003 µm
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| |Depending on the objective:
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| *0.5µm -> 5µm
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| |Depending on scan size and number of samples per line and number of lines - accuracy better than 2%
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| |-valign="top"
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| |'''Resolution z'''
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| |1Å, 10Å, 40Å or 160Å
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| |1Å, 10Å, 80Å or 160Å
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| |Depending on measuring methode:
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| *PSI down to 0.01 nm
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| *VSI down to 1 nm
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| *Confocal (depending on objective): 1nm -> 50nm
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| |<1Å - accuracy better than 2%
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| |- valign="top"
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| |'''Max. scan depth [µm] (as a function of trench width W''')
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| |1.2*(W[µm]-5µm)
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| |1.2*(W[µm]-5µm)
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| |Depending on material and trench width:
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| *Somewhere between 1:1 and 1:12
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| |~1:1 with standard cantilever.
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| |-valign="top"
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| |'''Tip radius'''
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| |5 µm 45<sup>o</sup> cone
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| |5 µm 45<sup>o</sup> cone
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| |No tip - using light
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| *Blue monochromatic LED: 460nm
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| *White broadband LED: 550nm
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| |<12 nm on standard cantilever
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| |-valign="top"
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| |'''Stress measurement'''
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| |Can be done
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| |Can be done
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| |No stress calculation capability
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| |Cannot be done
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| |-valign="top"
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| |'''Surface roughness'''
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| |Can be done on a line scan
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| |Can be done on a line scan
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| |Can be done on a line or an area
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| |Can be done on a selected surface area
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| |-
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| |}
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| {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | | {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" |