Specific Process Knowledge/Bonding: Difference between revisions
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== Choose equipment == | == Choose equipment == | ||
*[[/EVG NIL|EVG NIL]] | *[[/EVG NIL|EVG NIL]] | ||
* [[Specific Process Knowledge/Thermal Process/C3 | *[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]] | ||
Revision as of 14:48, 19 February 2014
Choose bonding method
Comparing the three bonding methods in the EVG NIL
| . | Eutectic bonding | Fusion bonding | Anodic bonding |
|---|---|---|---|
| General description | For bonding two substrates by use of an interphase that makes an eutecticum. | For bonding two identical materials. | For bonding Si and Glass. |
| Bonding temperature | Depending on the eutecticum 310°C to 400°C . | Depending on defects 50°C to 400°C . | Depending on the voltage 300°C to 500°C Standard is 400°C . |
| Annnealing temperature | No annealing | 1000°C in the bond furnace C3 | No annealing |
| Materials possible to bond | Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni | Si/Si, SiO/SiO | Si/Pyrex (glass) |
| Substrate size | Up to 6" (aligning only possible for 4" and 6") | Up to 6" (aligning only possible for 4" and 6") | Up to 6" (aligning only possible for 4" and 6") |
| Cleaning | Cleaning by N2. | Wet chemical cleaning, IMEC. | Cleaning by N2. |
| IR alignment | Double side polished wafers. | Double side polished wafers. | Not relevant. |
