Specific Process Knowledge/Lithography/NanoImprintLithography: Difference between revisions

Revision as of 12:31, 25 November 2013

EVG NIL

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The EVG NIL is a system for imprinting in polymers (Hot Embossing), and for bonding on wafer scale. 3 different types of bonding can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. In principle it is also possible to align the substrate and stamp before imprint, but it is much more difficult.

It is possible to fill bonded cavities with a desired gas. At the moment we have SF6 on the system, but if you would like another one, please contact Rune Christiansen.

The user manual, user APV, and contact information can be found in LabManager

Process information

Types of Bonding

Imprint information

Imprinting

Overview of the performance of the EVG NIL and some process related parameters

Purpose	Imprint and bonding	Eutectic bonding Fusion bonding Anodic bonding Imprinting
Performance	Alignment accuracy	± 5 microns for IR alignment ± 10 microns for backside alignment
Process parameter range	Process Temperature	Room temperature to 500 ${\rm {^{o}}}$ C
	Process pressure	~5 $\cdot$ 10^-4mbar - 2000mbar
	Piston Force	Depending on the area, for 4" wafers 200-20000N.
Substrates	Batch size	One 4" or 6" wafer per run Pieces are only allowed with speciel permission
	Substrate material allowed	Silicon wafers Quartz wafers Pyrex wafers
	Material allowed on the substrate	Silicon oxide Silicon (oxy)nitride Poly Silicon Photoresist PMMA TOPAS SU-8 Metals: Au, Sn, Ag, Al, Ti.

@@ Line 14: / Line 14: @@
 <br clear="all" />
+==Process information==
+====Types of Bonding====
+*[[Specific Process Knowledge/Bonding/Eutectic bonding|Eutectic bonding]]
+*[[Specific Process Knowledge/Bonding/Fusion bonding|Fusion bonding]]
+*[[Specific Process Knowledge/Bonding/Anodic bonding|Anodic bonding]]
+====Imprint information====
+*[[Specific Process Knowledge/Imprinting|Imprinting]]
+<br clear="all" />
+==Overview of the performance of the EVG NIL and some process related parameters==
+{| border="2" cellspacing="0" cellpadding="10"
+|-
+!style="background:silver; color:black;" align="left"|Purpose
+|style="background:LightGrey; color:black"|Imprint and bonding
+|style="background:WhiteSmoke; color:black"|
+*Eutectic bonding
+*Fusion bonding
+*Anodic bonding
+*Imprinting
+|-
+!style="background:silver; color:black" align="left"|Performance
+|style="background:LightGrey; color:black"|Alignment accuracy
+|style="background:WhiteSmoke; color:black"|
+*&plusmn; 5 microns for IR alignment
+*&plusmn; 10 microns for backside alignment
+|-
+|-
+!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
+|style="background:LightGrey; color:black"|Process Temperature
+|style="background:WhiteSmoke; color:black"|
+*Room temperature to 500<math>\rm{^o}</math>C
+|-
+|style="background:LightGrey; color:black"|Process pressure
+|style="background:WhiteSmoke; color:black"|
+*~5<math>\cdot</math>10<sup>-4</sup>mbar - 2000mbar
+|-
+|style="background:LightGrey; color:black"|Piston Force
+|style="background:WhiteSmoke; color:black"|
+*Depending on the area, for 4" wafers 200-20000N.
+|-
+!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
+|style="background:LightGrey; color:black"|Batch size
+|style="background:WhiteSmoke; color:black"|
+*One 4" or 6" wafer per run
+*Pieces are only allowed with speciel permission
+|-
+| style="background:LightGrey; color:black"|Substrate material allowed
+|style="background:WhiteSmoke; color:black"|
+*Silicon wafers
+*Quartz wafers
+*Pyrex wafers
+|-
+| style="background:LightGrey; color:black"|Material allowed on the substrate
+|style="background:WhiteSmoke; color:black"|
+*Silicon oxide
+*Silicon (oxy)nitride
+*Poly Silicon
+*Photoresist
+*PMMA
+*TOPAS
+*SU-8
+*Metals: Au, Sn, Ag, Al, Ti.
+|-
+|}