Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions
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==Under etching and local masking== | ==Under etching and local masking== | ||
When etching TOPAS I have in general used a hard mask material underneath my layer of photo resist, to ensure that if the resist was completely removed, a mask was still present. It is however always recomended to have a photo resist as mask, as a hard mask material will introduce roughness in unmask areas of the polymer. | |||
{| border="1" cellspacing="1" cellpadding="2" align="left" | {| border="1" cellspacing="1" cellpadding="2" align="left" | ||
! Silicon hard mask | ! Silicon hard mask | ||