Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions
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|[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]] | |[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]] | ||
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|style="width:200px" Etch broke through the photo resist layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects. | |style="width:200px;" Etch broke through the photo resist layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects. | ||
|The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch. | |The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch. | ||
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