Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions
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|[[Image:TOPAS-Si-hard-mask_U50.jpg|200x200px]] | |[[Image:TOPAS-Si-hard-mask_U50.jpg|200x200px]] | ||
|[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]] | |[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]] | ||
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|Etch broke through the photo resist layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects. | |||
|The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch. | |||
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|Etch | |Etch | ||