Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions
| Line 40: | Line 40: | ||
| 0.98 | | 0.98 | ||
| 0.95 | | 0.95 | ||
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==Under etching and local masking== | |||
{| border="1" cellspacing="1" cellpadding="2" align="left" | |||
! Silicon hard mask | |||
! Aluminum hard mask | |||
|- | |||
|[[Image:TOPAS-Si-hard-mask_U50.jpg|200x200px]] | |||
|[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]] | |||
|- | |||
|Etch | |||
*O<sub>2</sub> flow [sccm]:50 | |||
*CO<sub>2</sub> flow [sccm]:50 | |||
*Pressure [mTorr]:40 | |||
*Coil power [W]:800 | |||
*Platen power [W]:60 | |||
*Temperature [°C]:20 | |||
|Etch | |||
*O<sub>2</sub> flow [sccm]:50 | |||
*SF<sub>6</sub> flow [sccm]:50 | |||
*Pressure [mTorr]:40 | |||
*Coil power [W]:800 | |||
*Platen power [W]:60 | |||
*Temperature [°C]:20 | |||
|} | |} | ||
Revision as of 10:14, 4 November 2013
Etching of TOPAS
TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer.
| Parameter | Slow TOPAS etch | Fast TOPAS etch |
|---|---|---|
| O2 (sccm) | 50 | 99 |
| CO2 (sccm) | 50 | 0 |
| Pressure (mTorr) | 40 | 40 |
| Coil power (W) | 800 | 720 |
| Platen power (W) | 60 | 60 |
| Temperature (oC) | 20 | 20 |
| Etch rate (nm/min) | ~350 | ~500 |
| Center-Edge uniformity | 0.98 | 0.95 |
Under etching and local masking
| Silicon hard mask | Aluminum hard mask |
|---|---|
|
|
Etch
|
Etch
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