Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions
No edit summary |
|||
| Line 6: | Line 6: | ||
|- | |- | ||
! Parameter | ! Parameter | ||
! TOPAS etch | ! Slow TOPAS etch | ||
! Fast TOPAS etch | |||
|- | |- | ||
! O<sub>2</sub> (sccm) | ! O<sub>2</sub> (sccm) | ||
| 50 | |||
| 99 | | 99 | ||
|- | |- | ||
! CO<sub>2</sub> (sccm) | ! CO<sub>2</sub> (sccm) | ||
| 50 | |||
| 0 | | 0 | ||
|- | |- | ||
! Pressure (mTorr) | ! Pressure (mTorr) | ||
| 40 | |||
| 40 | | 40 | ||
|- | |- | ||
! Coil power (W) | ! Coil power (W) | ||
| 800 | |||
| 720 | | 720 | ||
|- | |- | ||
! Platen power (W) | ! Platen power (W) | ||
| 60 | |||
| 60 | | 60 | ||
|- | |- | ||
! Temperature (<sup>o</sup>C) | ! Temperature (<sup>o</sup>C) | ||
| 20 | |||
| 20 | | 20 | ||
|- | |- | ||
! Etch rate (nm/min) | ! Etch rate (nm/min) | ||
| ~350 | |||
| ~500 | | ~500 | ||
|- | |||
!Center-Edge uniformity | |||
| 0.98 | |||
| 0.95 | |||
|} | |} | ||
Revision as of 09:56, 4 November 2013
Etching of TOPAS
TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer.
| Parameter | Slow TOPAS etch | Fast TOPAS etch |
|---|---|---|
| O2 (sccm) | 50 | 99 |
| CO2 (sccm) | 50 | 0 |
| Pressure (mTorr) | 40 | 40 |
| Coil power (W) | 800 | 720 |
| Platen power (W) | 60 | 60 |
| Temperature (oC) | 20 | 20 |
| Etch rate (nm/min) | ~350 | ~500 |
| Center-Edge uniformity | 0.98 | 0.95 |