Specific Process Knowledge/Etch/Etching of SU-8: Difference between revisions
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==Etching of SU-8== | ==Etching of SU-8== | ||
SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures. | SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures. | ||
* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8 | |||
* Low anisotropic etch: etch rate ~180nm/min, anisotropy ~0.3 | |||
Revision as of 08:02, 4 November 2013
Etching of SU-8
SU-8 can be etched by a oxygen plasma with a small amount of SF6 to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures.
- High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8
- Low anisotropic etch: etch rate ~180nm/min, anisotropy ~0.3