Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions

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	Is ~~in use during~~ the RCA procedure. This bath must only be used in the RCA procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details or the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page.		Is a part of the RCA cleaning procedure. This bath must only be used during the RCA cleaning procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details. For removal of oxide of processed wafers the other HF/BHF bath can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page.