Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions

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Is a part of the RCA cleaning procedure. This bath must only be used during the RCA cleaning procedure or to remove native oxide on new wafers from the box. See the RCA page for further details. For removal of oxide of processed wafers the other HF/BHF bath can be used see the oxide etch page.

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	Is ~~in use during~~ the RCA procedure. This bath must only be used in the RCA procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details or the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page.		Is a part of the RCA cleaning procedure. This bath must only be used during the RCA cleaning procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details. For removal of oxide of processed wafers the other HF/BHF bath can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page.