Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

==Overview of the performance of PECVD thin films and some process related parameters==

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!style="background:silver; color:black;" align="left"|Purpose  

|style="background:LightGrey; color:black"|Deposition of dielectrica  

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*Silicon oxide

*Silicon nitride

|style="background:LightGrey; color:black"|Film thickness

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*~10nm - 30µm

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|style="background:LightGrey; color:black"|Index of refraction

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*~1.4-2.1

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|style="background:LightGrey; color:black"|Step coverage

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*In general: Not so good

*PBSG: Floats at 1000^oC

|style="background:LightGrey; color:black"|Film quality

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*Not so dense film

*Hydrogen will be incorporated in the films

|style="background:LightGrey; color:black"|Process Temperature

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*300 ^oC

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|style="background:LightGrey; color:black"|Process pressure

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*~200-900 mTorr

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|style="background:LightGrey; color:black"|Gas flows

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*SiH<math>_4</math>:0-60 sccm

*N<math>_2</math>O:0-3000 sccm

|style="background:LightGrey; color:black"|Batch size

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*1-3 4" wafer per run

*1 6" wafer per run

| style="background:LightGrey; color:black"|Substrate material allowed

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*Silicon wafers

**with layers of silicon oxide or silicon (oxy)nitride

| style="background:LightGrey; color:black"|Material allowed on the substrate

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*Aluminium

*All metals < 5% of the substrate coverage (ONLY PECVD3!)

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