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Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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Bureaucrats, danchip, Administrators
143 edits
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*Etch of aluminium + 1.5% Si
*Etch of aluminium + 1.5% Si
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|Chemical solution
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|Possible masking materials:
|Possible masking materials:
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*Photoresist
*Photoresist (1.5 µm AZ5214E)
*Silicon nitride
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*Photoresist
*Photoresist (1.5 µm AZ5214E)
*(Poly)Silicon
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*Aluminium
*Chromium (ONLY RIE2!)
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
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*Photoresist
*(Poly)Silicon
*Aluminium
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|Etch rate
|Etch rate
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~70-90 nm/min (Thermal oxide)
~100 nm/min (Pure Al)
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*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. 
~60(??) nm/min
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*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters.
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|Batch size
|Batch size
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*1-25 wafers at a time
*1-25 wafers at a time
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*1 wafer at a time
*1-25 wafer at a time
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*1 wafer at a time
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|Size of substrate
|Size of substrate
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*4" wafers
*4" wafers
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*4" wafers or smaller pieces
*4" wafers
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*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer)
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|Allowed materials
|Allowed materials
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*Aluminium
*Silicon
*Silicon
*Silicon Oxide
*Silicon Oxide
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*Silicon Oxynitride
*Silicon Oxynitride
*Photoresist
*Photoresist
*Blue film
*E-beam resist
*Gold (Au) and Nickel (Ni) (but only in BHF2 (KOH)!)
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*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
*Aluminium
*Aluminium
*Chromium (ONLY RIE2!)
*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
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*Silicon
*Silicon
*Silicon Oxide
*Silicon Oxide
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*Photoresist
*Photoresist
*E-beam resist
*E-beam resist
*Aluminium
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