Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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 # H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
 # Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
+{| border="1" cellspacing="0" cellpadding="4" align="center"
+!
+! Aluminium Etch 1
+! Aluminium Etch 2
+|-
+|General description
+|
+*Etch of pure aluminium
+|
+*Etch of aluminium + 1.5% Si
+|-
+|Possible masking materials:
+|
+*Photoresist
+*Silicon nitride
+|
+*Photoresist
+*(Poly)Silicon
+*Aluminium
+*Chromium (ONLY RIE2!)
+*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
+|
+*Photoresist
+*(Poly)Silicon
+*Aluminium
+|-
+|Etch rate
+|
+~70-90 nm/min (Thermal oxide)
+|
+*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters.
+|
+*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters.
+|-
+|Batch size
+|
+*1-25 wafers at a time
+|
+*1 wafer at a time
+|
+*1 wafer at a time
+|-
+|Size of substrate
+|
+*4" wafers
+|
+*4" wafers or smaller pieces
+|
+*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer)
+|-
+|Allowed materials
+|
+*Silicon
+*Silicon Oxide
+*Silicon Nitride
+*Silicon Oxynitride
+*Photoresist
+*Blue film
+*Gold (Au) and Nickel (Ni) (but only in BHF2 (KOH)!)
+|
+*Silicon
+*Silicon Oxide
+*Silicon Nitride
+*Silicon Oxynitride
+*Photoresist
+*E-beam resist
+*Aluminium
+*Chromium (ONLY RIE2!)
+*Other metals that covers less the 5% of the wafer area (ONLY RIE2!)
+|
+*Silicon
+*Silicon Oxide
+*Silicon Nitride
+*Silicon Oxynitride
+*Photoresist
+*E-beam resist
+*Aluminium
+|-
+|}