Specific Process Knowledge/Etch: Difference between revisions
No edit summary |
|||
Line 15: | Line 15: | ||
== Choose material to be etched == | == Choose material to be etched == | ||
{| {{table}} | |||
| align="left" valign="top" style="background:LightGray"|''' Dielectrica''' | |||
| align="left" valign="top" style="background:#DCDCDC;"|''' Semicondutors''' | |||
| align="left" valign="top" style="background:LightGray"|''' Metals''' | |||
| align="left" valign="top" style="background:#DCDCDC;"|''' Alloys''' | |||
| align="left" valign="top" style="background:LightGray"|''' Polymers''' | |||
|-valign="top" | |||
|style="background: LightGray"| | |||
*[[/Etching of Silicon Nitride|Silicon Nitride]] | |||
*[[/Etching of Silicon Oxide|Silicon Oxide]] | |||
*[[/Etching of Bulk Glass|Bulk Glass]] - ''Borofloat (pyrex) and fused silica (quartz)'' | |||
|style="background: #DCDCDC"| | |||
*[[/Etching of Silicon|Silicon]] | |||
|style="background: LightGray"| | |||
*[[/Etching of Aluminium|Aluminium]] | *[[/Etching of Aluminium|Aluminium]] | ||
*[[/Etching of Chromium|Chromium]] | *[[/Etching of Chromium|Chromium]] | ||
Line 21: | Line 35: | ||
*[[/Etching of Platinum|Platinum]] | *[[/Etching of Platinum|Platinum]] | ||
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch|Magnetic stack]] - ''containing Ta/MnIr/NiFe'' | *[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch|Magnetic stack]] - ''containing Ta/MnIr/NiFe'' | ||
|style="background: #DCDCDC"| | |||
*No results, use IBE | |||
|style="background: LightGray"| | |||
*[[/Etching of Polymer|Polymer]] | *[[/Etching of Polymer|Polymer]] | ||
|- | |||
|} | |||
== Choose Method == | == Choose Method/Equipment for the Etch == | ||
{| {{table}} | {| {{table}} | ||
Line 51: | Line 66: | ||
*[[/Wet Gold Etch|Wet Gold Etch]] | *[[/Wet Gold Etch|Wet Gold Etch]] | ||
*[[/Wet Platinum Etch|Wet Platinum Etch]] | *[[/Wet Platinum Etch|Wet Platinum Etch]] | ||
|- | |- | ||
|} | |} |
Revision as of 09:47, 15 October 2013
Feedback to this page: click here
Wet etch or dry etch
Etching at Danchip can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.
Advantages of wet chemistry over dry etch techniques are:
- An often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.
- Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
- Easy to start up new etch solutions.
Advantages of dry etch over wet chemistry:
- Anisotropic etch can be done.
- The etch does not attach the backside of the sample.
Choose material to be etched
Dielectrica | Semicondutors | Metals | Alloys | Polymers |
|
|
Choose Method/Equipment for the Etch
A Dry Etch Equipment | A Wet Etch |
|