Specific Process Knowledge/Thin film deposition: Difference between revisions

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=  Section under construction [[Image:section under construction.jpg|70px]] =
=  Section under construction [[Image:section under construction.jpg|70px]] =
{| {{table}}
| align="center" style="background:#f0f0f0;"|''' Parameters'''
| align="center" style="background:#f0f0f0;"|''' Units '''
|-
| Temperature||deg C||
|-
| Pressure ||mbar||
|-
| Flow ||sccm||
|-
|
|}





Revision as of 13:47, 14 October 2013

3rd Level - Material/Methode

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Choose material to deposit

Dielectrica

Metals/elements

Period/Group

IVB VB VIB VIIIB IB IIIA IVA
3 . . . . . 13 Al Aluminium 14 Si Silicon
4 22 Ti Titanium . 24 Cr Chromium 28 Ni Nickel 29 Cu Copper . 32 Ge Germanium
5 . . 42 Mo Molybdenum 46 Pd Palladium 47 Ag Silver . 50 Sn Tin
6 . 73 Ta Tantalum 74 W Tungsten 78 Pt Platinum 79 Au Gold . .

Alloys


Polymers

  • SU8
  • Antistiction coating
  • Topas
  • PMMA

Choose deposition equipment


Section under construction

Parameters Units
Temperature deg C
Pressure mbar
Flow sccm



Dielectrica

Semiconductors

Metals

Alloys

Polymers