Specific Process Knowledge/Thermal Process: Difference between revisions
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== Choose an equipment to use == | == Choose an equipment to use == | ||
*[[/A1 Bor Drive-in furnace|Boron Drive-in furnace (A1)]] - ''For oxidation and annealing of Si wafesr, and for boron pre-deposition (doping) and for drive-in afterwards'' | *[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafesr, and for boron pre-deposition (doping) and for drive-in afterwards'' | ||
*[[/ | *[[/C2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For gate oxide growing on new wafers'' | ||
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | *[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | ||
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | *[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | ||
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace(C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | *[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace(C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | ||
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | *[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | ||
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For oxidation and annealing of wafers containing aluminium'' | *[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For oxidation and annealing of wafers containing aluminium'' | ||