Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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Aluminium Anneal furnace (C4)

C4 Aluminium Anneal furnace. Positioned in cleanroom 2

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for annealing of silicon wafers with aluminium.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that contain aluminium. Check the cross contamination chart.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

Annealing: look at the Annealing page

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose	Annealing	Annealing of wafers containing aluminium.
Performance	Film thickness
Process parameter range	Process Temperature	400-500 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 5 sccm O₂: 5 sccm
Substrates	Batch size	1-30 4" wafer (or 2" wafers)
Substrates	Substrate material allowed	Silicon wafers with alluminium. Wafers are allowed enter the furnace after Al lift-off or after Al etch and resist strip in acetone

@@ Line 48: / Line 48: @@
 | style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
-Silicon wafers with alluminium.
+*Silicon wafers with alluminium.
-Wafers are allowed after alluminium lift off or after alluminium etch and resiststrip in acetone
+*Wafers are allowed enter the furnace after Al lift-off or after Al etch and resist strip in acetone
 |-
 |}