Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions

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|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (takes too long to make it thicker)
*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (it takes too long to grow a thicker oxide)
*Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker)
*Wet SiO<sub>2</sub>: 50Å to ~5µm (it takes too long to grow a thicker oxide)
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|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box or RCA cleaned)
*Silicon wafers (RCA cleaned)
*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
*Quartz wafers (RCA cleaned)
*Quartz wafers (RCA cleaned)

Revision as of 13:52, 9 January 2014

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Anneal-oxide furnace (C1)

C1 Anneal-oxide furnace. Positioned in cleanroom 2

The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD1). Both 100 mm and 150 mm wafers can be processed in the furnace.

The Anneal-oxide furnace is the upper furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to process wafers that comes directly from PECVD1, all other wafers have to the RCA cleaned. Check the cross contamination chart.

The user manual, technical information and contact information can be found in LabManager:

Anneal-oxide furnace (C1)

Process knowledge


Overview of the performance of Anneal Oxide furnace and some process related parameters

Purpose Oxidation and annealing Oxidation:
  • Dry
  • Wet: with bubbler (water steam + N2)
Performance Film thickness
  • Dry SiO2: 50Å to ~2000Å (it takes too long to grow a thicker oxide)
  • Wet SiO2: 50Å to ~5µm (it takes too long to grow a thicker oxide)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gas flows
  • Annealing: N2:5 sccm
  • Dry oxidation: O2:5 sccm
  • Wet oxidation: N2:5 sccm
Substrates Batch size
  • 1-30 4" and 6" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (RCA cleaned)
  • Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
  • Quartz wafers (RCA cleaned)
  • From PECVD1 directly (assuming they fulfilled the above before entering the PECVD1)
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