Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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==Oxidation== | ==Oxidation== | ||
At Danchip we have seven furnaces for oxidation: A1, A3, C1 | At Danchip we have seven furnaces for oxidation: A1, A2, A3, C1, C3, D1 and nobel. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and dielectric constant. | ||
If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | ||
*Dry oxide is used from 5 nm - 200 nm. Can be grown in furnaces: A1, A3, C1 | *Dry oxide is used from 5 nm - 200 nm. Can be grown in furnaces: A1, A2, A3, C1, C3. | ||
*Wet oxide with O<sub>2</sub> and H<sub>2</sub> can be grown in furnace: A1, A3. | *Wet oxide with O<sub>2</sub> and H<sub>2</sub> can be grown in furnace: A1, A3. | ||
*Wet oxide with H<sub>2</sub>O in a bubbler can be grown in furnaces: C1 | *Wet oxide with H<sub>2</sub>O in a bubbler can be grown in furnaces: C1, C3, D1, nobel. | ||
==Comparison of the six oxidation furnaces== | ==Comparison of the six oxidation furnaces== | ||