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Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C2 <br />Gate oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
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|-valign="top"
|-valign="top"
! General description
! General description
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Oxidation of gate-oxide and other especially clean oxides.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing.  
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing.  
|-
|-
! Annealing with N<sub>2</sub>
! Annealing with N<sub>2</sub>
|x||x||x||x (with special permission)||x||x||x||x
|x||x||x||x||x||x||x
|-
|-
!Wet annealing with bubler (water steam + N<sub>2</sub>)
!Wet annealing with bubler (water steam + N<sub>2</sub>)
|.||.||x||.||x||.||.||.
|.||.||x||x||.||.||.
|-
|-
!Process temperature [ <sup>o</sup>C ]
!Process temperature [ <sup>o</sup>C ]
|800-1150||800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||22-1000<sup>o</sup>C
|800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||22-1000<sup>o</sup>C
|-valign="top"
|-valign="top"
! Batch size
! Batch size
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||1x4" or small pieces
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"|||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||1x4" or small pieces
|-
|-
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:  
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:  
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| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C2 <br />Gate oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
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| valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
| valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
|-
|-
| New clean* Si wafers 4" (6" in C1)||x||x||x||x (with special permission)||x||x||x||x
| New clean* Si wafers 4" (6" in C1)||.||.||.||x||x||x||x
|-
|-
| RCA clean** Si wafers with no history of Metals on||x||x||x||x (with special permission)||x||x||x||x
| RCA clean** Si wafers with no history of Metals on||x||x||x||x||x||x||x
|-
|-
| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||x||.||x||x||x||x
| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||x||x||x||x||x
|-
|-
| Wafers directly from PECVD1||.||.||x||.||x||x||x||x
| Wafers directly from PECVD1||.||.||x||x||x||x||x
|-
|-
| Wafers directly from NIL bonding||.||.||.||.||x||x||x||x
| Wafers directly from NIL bonding||.||.||.||x||x||x||x
|-
|-
|Wafers with aluminium||.||.||.||.||.||x||x||.
|Wafers with aluminium||.||.||.||.||x||x||.
|-
|-
|wafers with other metals||.||.||.||.||.||.||x||.
|wafers with other metals||.||.||.||||.||x||.
|-
|-
|wafers with III-V materials||||||||||||||||x
|wafers with III-V materials||||||||||||||x
|-
|-
|}
|}
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