Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in''' | | valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium''' | ||
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|-valign="top" | |-valign="top" | ||
! General description | ! General description | ||
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers | |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing. | ||
|- | |- | ||
! Annealing with N<sub>2</sub> | ! Annealing with N<sub>2</sub> | ||
|x||x||x | |x||x||x||x||x||x||x | ||
|- | |- | ||
!Wet annealing with bubler (water steam + N<sub>2</sub>) | !Wet annealing with bubler (water steam + N<sub>2</sub>) | ||
|.||.||x | |.||.||x||x||.||.||. | ||
|- | |- | ||
!Process temperature [ <sup>o</sup>C ] | !Process temperature [ <sup>o</sup>C ] | ||
|800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||22-1000<sup>o</sup>C | |||
|-valign="top" | |-valign="top" | ||
! Batch size | ! Batch size | ||
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"| | |max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"|||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||1x4" or small pieces | ||
|- | |- | ||
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace: | !style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace: | ||
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| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in''' | | valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond''' | ||
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium''' | | valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium''' | ||
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| valign="top" align="center" style="background:#f0f0f0;"|'''RTP''' | | valign="top" align="center" style="background:#f0f0f0;"|'''RTP''' | ||
|- | |- | ||
| New clean* Si wafers 4" (6" in C1)|| | | New clean* Si wafers 4" (6" in C1)||.||.||.||x||x||x||x | ||
|- | |- | ||
| RCA clean** Si wafers with no history of Metals on||x||x||x | | RCA clean** Si wafers with no history of Metals on||x||x||x||x||x||x||x | ||
|- | |- | ||
| From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4||x | | From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4||x||x||x||x||x | ||
|- | |- | ||
| Wafers directly from PECVD1||.||.||x | | Wafers directly from PECVD1||.||.||x||x||x||x||x | ||
|- | |- | ||
| Wafers directly from NIL bonding | | Wafers directly from NIL bonding||.||.||.||x||x||x||x | ||
|- | |- | ||
|Wafers with aluminium | |Wafers with aluminium||.||.||.||.||x||x||. | ||
|- | |- | ||
|wafers with other metals||.||.||.|| | |wafers with other metals||.||.||.||||.||x||. | ||
|- | |- | ||
|wafers with III-V materials | |wafers with III-V materials||||||||||||||x | ||
|- | |- | ||
|} | |} | ||
Revision as of 14:45, 28 November 2013
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Annealing
At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
- Anneal with N2 can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
- Wet anneal with H2O in a bubbler can be done in furnaces:C1 and C3.
Comparison of the seven annealing equipments
| A1 Boron drive-in |
A3 Phosphorous drive-in |
C1 Anneal oxide |
C3 Anneal bond |
C4 Anneal aluminium |
Nobel furnace | RTP | |
| General description | Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation. | Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation. | Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers. | Annealing and oxidation of wafers from NIL. | Annealing of wafers with aluminium. | Annealing and oxidation of any material. | Rapid thermal annealing. |
|---|---|---|---|---|---|---|---|
| Annealing with N2 | x | x | x | x | x | x | x |
| Wet annealing with bubler (water steam + N2) | . | . | x | x | . | . | . |
| Process temperature [ oC ] | 800-1150 | 800-1150 | 800-1150 | 800-1150 | 800-1150 | 22-1000oC | 22-1000oC |
| Batch size | max. 30 wafers of 4" or 2" | max. 30 4" wafers or 2" wafers | max. 30 wafers of 6",4" or 2" | max. 30 4" wafers or 2" wafers | max. 30 4" wafers or 2" wafers | 30x4" or small pieces | 1x4" or small pieces |
| Which wafers are allowed to enter the furnace: | A1 Boron drive-in |
A3 Phosphorous drive-in |
C1 Anneal oxide |
C3 Anneal bond |
C4 Anneal aluminium |
Nobel | RTP |
| New clean* Si wafers 4" (6" in C1) | . | . | . | x | x | x | x |
| RCA clean** Si wafers with no history of Metals on | x | x | x | x | x | x | x |
| From Predep furnace directly (e.g. incl. Predep HF**) | From A2 | From A4 | x | x | x | x | x |
| Wafers directly from PECVD1 | . | . | x | x | x | x | x |
| Wafers directly from NIL bonding | . | . | . | x | x | x | x |
| Wafers with aluminium | . | . | . | . | x | x | . |
| wafers with other metals | . | . | . | . | x | . | |
| wafers with III-V materials | x |
*New clean: only right from the new clean box. It is not allowed to put them in another box first.
**These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.