Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
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==Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride== | ==Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride== | ||
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|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD3''' | |||
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*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1389&mach=18 The QC procedure for RIE1 and RIE2]<br> | |||
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=18 The newest QC data for RIE1]<br> | |||
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=19 The newest QC data for RIE2] | |||
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! QC Recipe: | |||
! QCNITRIDE | |||
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| SiH<sub>4</sub> flow | |||
|30 sccm | |||
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|NH<sub>3</sub> flow | |||
|30 sccm | |||
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|N<sub>2</sub> flow | |||
|1470 sccm | |||
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|Pressure | |||
|650 mTorr | |||
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|RF-power | |||
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*LF: 20 W 2s | |||
*HF: 20 W 6s | |||
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!QC limits | |||
!PECVD3 | |||
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|Depoition rate | |||
|? - ? nm/min | |||
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|Non-uniformity | |||
|? - ? % | |||
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===Recipes=== | ===Recipes=== | ||
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Revision as of 14:57, 18 November 2013
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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride
Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1nitride | 30 | 20 | 1000 | 500 | 80 | |
| 1nit_std | 40 | 20 | 1960 | 550 | 60 | Process control recipe |
Expected results
| Recipe name | Deposition rate [nm/min] | RI | Uniformity [%] | Stress [MPa] | BHF etch rate [Å/min] | Comments |
| 1nitride | ||||||
| 1nit_std | ~32 | 1.89 | ~1 | ~700 | The latest measured values can be seen in the process control sheet in LabManager |
Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride
| Quality Controle (QC) for PECVD3 | ||||||||||||||||||||
|
Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| MFSiNLS | 30 | 30 | 1470 | 650 | 20HF 6s
20LF 2s |
Low stress nitride - standard recipe. The latest measured values can be seen in the process control sheet in LabManager. |
| LFSiN | 30 | 15 | 1470 | 550 | 60LF | Compressive stress |
| HFSiN | 30 | 42 | 1470 | 900 | 20HF | Tensile stress |
LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress
Expected results
| Recipe name | Deposition rate [Å/min] | RI | Uniformity [%] [Std./mean] |
Stress [MPa] | KOH etch rate [Å/min] | BHF etch rate [Å/min] |
| MFSiNLS | ~107 | ~1.99 | ~4 | ~-30 | ~2.5 | ~250 |
| LFSiN | ~550 | ~1.96 | ~3 | ~-630 | . | . |
| HFSiN | ~130 | ~1.97 | ~2 | ~460 | . | . |