Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions
No edit summary |
|||
Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si click here]''' | |||
==Test of the deposition rate and film characteristics== | ==Test of the deposition rate and film characteristics== | ||
Revision as of 08:41, 11 October 2013
Feedback to this page: click here
Test of the deposition rate and film characteristics
Recipe
Recipe 1 | |
---|---|
Platen angle | 10 degrees |
Platen rotation speed | 20rpm |
Ar(N) flow | 4 sccm |
Ar(dep. source) flow | 8 sccm |
I(N) | 320mA |
Power | 700W |
I(B) | 280mA |
V(B) | 1100V |
Vacc(B) | 400V |
Results
Depostion time | 10 min (before 2013) | 30 min (before 2013) | 30 min (before 2013) | 30 min (2013-10-4) |
---|---|---|---|---|
Characterization method | FilmTek | FilmTek | Ellipsometer 3 angles | Ellipsometer 3 angles |
Deposition thickness | 71 nm | 229 nm | 242 nm | 194 nm (2013-10-4) |
Deposition rate | 7.1 nm/min | 7.6 nm/min | 8.1 nm/min | 6.5 nm/min |
Refractive index @632nm |
n=4.55 |
n=4.916 |
n=4.589 |
n=4.625 |
Refractive index @1000nm @950nm using the ellipsometer |
n=? |
n=4.297 |
n=4.136 |
n=4.206 |
Refractive index @1550nm |
n=? |
n=? |
n=? |
n=3.970 |
Roughness | 6.1 nm | 10.4 nm | 1.1 nm | 0.9 nm |