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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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* 4x4" wafers or
* 4x4" wafers or
* 4x2" wafers
* 4x2" wafers
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|.
*1-25 wafers of 4"
*1-25 wafers of 4"
*For other sizes ask the furnace team
*For other sizes ask the furnace team
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*6x4" wafers or
*6x4" wafers or
*6x6" wafers
*6x6" wafers
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| Pre-clean
| Pre-clean
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|RCA clean for wafers that are not fresh form the box.
|RCA clean for wafers that are not fresh form the box.
|RF Ar clean
|RF Ar clean
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|.
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| Layer thickness
| Layer thickness
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|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|10Å to about 3000Å
|10Å to about 3000Å
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| Deposition rate
| Deposition rate
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*undoped, boron doped:~100Å/min
*undoped, boron doped:~100Å/min
*Phospher doped:~20Å/min
*Phospher doped:~20Å/min
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|.
Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
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|Process temperature
|Process temperature
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|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
|?
|?
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|Step coverage
|Step coverage
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|.


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|Adhesion
|Adhesion
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|Good for fused silica, silicon oxide, silicon nitride, silicon
|Good for fused silica, silicon oxide, silicon nitride, silicon
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|.
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|.
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|Substrate material allowed
|Substrate material allowed
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|Fused silica, Silicon, oxide, nitride
|Fused silica, Silicon, oxide, nitride
|Pyrex, fused silica, silicon, metals, oxide, nitride
|Pyrex, fused silica, silicon, metals, oxide, nitride
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|.


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|Can be doped during deposition with Boron and/or Phosphorous
|Can be doped during deposition with Boron and/or Phosphorous
| None
| None
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|.
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