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==III-V Spinner==
==III-V Spinner==
[[Image:3-5 spinner.jpg|300x300px|thumb|III-V Aligner positioned in III-V cleanroom ]]
The III-V spinner is a SÜSS RC8 Spin Coater intended for processing of III-V compound semiconductors and CMOS compatible materals. Please note, that '''there are different chucks for III-V materials and Si-, SiO2-materials.''' The spinner is mounted in a flow hood located in the III-V laboratory (yellow room). The extra exhaust should always be turned on while spinning.
The III-V spinner is a SÜSS RC8 Spin Coater intended for processing of III-V compound semiconductors and CMOS compatible materals. Please note, that '''there are different chucks for III-V materials and Si-, SiO2-materials.''' The spinner is mounted in a flow hood located in the III-V laboratory (yellow room). The extra exhaust should always be turned on while spinning.


'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=140 LabManager]'''
'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=140 LabManager]'''


[[Image:3-5 spinner.jpg|300x300px|thumb|III-V Aligner positioned in III-V cleanroom ]]




{| border="2" cellspacing="0" cellpadding="10"  
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=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spin coating and soft baking UV sensative resists
*Spin coating E-beam resits
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="4"|Performance
!style="background:silver; color:black;" align="center" width="60"|Resist
|style="background:LightGrey; color:black"|Maximum speed
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
* AZ5214E manual dispense
* E-beam resits manual dispense
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
|style="background:LightGrey; color:black"|Coating thickness
|style="background:WhiteSmoke; color:black" align="center"|
* AZ5214E 1-4,2 µm
* E-beam resits 0,1-1 µm
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Spin speed
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Cover closed: 7000 rpm
*Cover closed: 7000 rpm
*Cover open: 1000 rpm
*Cover open: 1000 rpm
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* non-vaccum chuck: 5000 rpm
* non-vaccum chuck: 5000 rpm
|-
|-
|style="background:LightGrey; color:black"|Maximum acceleration
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*5000 rpm/s
100 - 5000 rpm/s
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:WhiteSmoke; color:black" align="center"|
* 90 for III-V materials
* 110 for III-V materials
* changeable temperature from 20-200 for other materials
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
* small pieces down to 3x3 mm2
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials. Please notice that III-V materials need to be run on the dedicated chuck!
|-
|-
| style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* Maximum substrate size: 6"
1
* Minimum substrate size: 3*3 mm2
* maximum substrate thickness: 4 mm
|-
| style="background:LightGrey; color:black"|Allowed Substrate material
|style="background:WhiteSmoke; color:black"|
*III-V compound semiconductors
*CMOS compatible materials
|-  
|-  
|}
|}


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