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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Elkh (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
343 edits
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* The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.
* The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.


== Overview of performance ==
=== Equipment performance and process related parameters ===


{| border="2" cellspacing="0" cellpadding="4" align="left"
{| border="2" cellspacing="0" cellpadding="2"
 
|'''Magnification'''
 
|1 : 5
 
|-  
!style="background:silver; color:black;" align="center" width="60"|Purpose
|'''NA'''
|style="background:LightGrey; color:black"|
|0,6
|style="background:WhiteSmoke; color:black" colspan="2"|
Exposure system designed for mass/production of devices with linewidth down to 250nm
|-
 
!style="background:silver; color:black" align="center" valign="center" rowspan="9"|Specifications
|style="background:LightGrey; color:black"|Magnification
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1:5
|-
|style="background:LightGrey; color:black"|Projection lens Numerical Aperture
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
0,60
|-
|style="background:LightGrey; color:black"|Projection lens sigma
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
0,65 (usual illumination mode)
|-
|style="background:LightGrey; color:black"|Exposure source
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
KrF laser
|-
|style="background:LightGrey; color:black"|Wavelength
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
248nm
|-
|-
|'''Sigma'''
|style="background:LightGrey; color:black"|Illumination intensity
|0,65 (usual illumination mode)
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
2800 W/m<sup>2</sup>
|-
|-
|'''Illumination Intensity'''
|style="background:LightGrey; color:black"|Illumination uniformity
|2800 W/m<sup>2</sup>
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1,2%
|-
|-
|'''Illumination uniformity'''
|style="background:LightGrey; color:black"|Maximum printed field size
|1,2 %
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
22 x 26 mm (maximum on wafer)
|-
|-
|'''Wavelength'''
|style="background:LightGrey; color:black"|Alignment accuracy
|248 nm
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
3 sigma = 50 nm
|-
|-
|'''Chip size'''
 
|22 x 26 mm (maximum on wafer)
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*100 mm wafers
*150 mm wafers
*200 mm wafers
|-
|-
|'''Allignment accuracy'''
| style="background:LightGrey; color:black"|Allowed materials
|3 sigma = 50 nm
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Silicon (with oxide, nitride, or metal films or patterning)
*Glass (borosilicate and quartz)
*III-V materials
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1 - 25
|-
|}
|}
<br clear="all" />
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