Jump to content

Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

← Older editNewer edit →
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
Line 25: Line 25:
|-
|-
|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Anisotropy||style="background:WhiteSmoke; color:black"|
|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Anisotropy||style="background:WhiteSmoke; color:black"|
*Can vary from isotropic to anisotropic with vertical sidewalls and on to a physical etch were the sidewalls are angled but without etching under the mask.
*Good
 
|-
|-
!style="background:silver; color:black" align="left"|Process parameter range
!style="background:silver; color:black" align="left"|Process parameter range
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch)"