Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions
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[[Image:stepper_image_1.jpg|200×200px|right|thumb|DUV Stepper is placed in the stepper room.]] | [[Image:stepper_image_1.jpg|200×200px|right|thumb|DUV Stepper is placed in the stepper room.]] | ||
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The FPA-3000EX4 is an advanced exposure system designed for mass-production of 6 and 8 inch large wafers/ devices. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm) leading to a specified resolution of 250 nm that is improved when well-defined pattern designs are used. The best resolution could be achieved with single line structures (line widths down to 160 nm) and multi-line structures (line widths down to 180 nm). | The FPA-3000EX4 is an advanced exposure system designed for mass-production of 6 and 8 inch large wafers/ devices. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm) leading to a specified resolution of 250 nm that is improved when well-defined pattern designs are used. The best resolution could be achieved with single line structures (line widths down to 160 nm) and multi-line structures (line widths down to 180 nm). | ||