Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions
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*Positive DUV resist for spinning in 1600-800nm thickness range [[Media:M35G_Danchip_intro.pdf|KRF M35G]]. | *Positive DUV resist for spinning in 1600-800nm thickness range [[Media:M35G_Danchip_intro.pdf|KRF M35G]]. | ||
*Negative DUV resist for spinning in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range [[Media:UVN2300.pdf|UVN2300-0.8]]. | *Negative DUV resist for spinning in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range [[Media:UVN2300.pdf|UVN2300-0.8]]. | ||
=== Equipment performance and process related parameters === | |||
{| border="2" cellspacing="0" cellpadding="2" | |||
!style="background:silver; color:black;" align="center" width="60"|Purpose | |||
|style="background:LightGrey; color:black"| | |||
|style="background:WhiteSmoke; color:black" colspan="2"| | |||
*Spin coating and soft baking of BARC | |||
*Spin coating and soft baking of DUV resists | |||
*Post exposure baking | |||
|- | |||
!style="background:silver; color:black;" align="center" width="60"|Resist | |||
|style="background:LightGrey; color:black"| | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
*BARC DUV42S-6 | |||
*Positive tone resist KRF M230Y | |||
*Positive tone resist KRF M35G | |||
*Negative tone resist UVN2300-0.8 | |||
|- | |||
!style="background:silver; color:black;" align="center" width="60"|Performance | |||
|style="background:LightGrey; color:black"|Coating thickness | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
*BARC DUV42S-6 around 60nm | |||
*Positive tone resist KRF M230Y 300-600nm | |||
*Positive tone resist KRF M35G 800-1600nm | |||
*Negative tone resist UVN2300-0.8 200-1400nm | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | |||
|style="background:LightGrey; color:black"|Spin speed | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
10 - 5000 rpm | |||
|- | |||
|style="background:LightGrey; color:black"|Spin acceleration | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
100 - 10000 rpm/s | |||
|- | |||
|style="background:LightGrey; color:black"|Hotplate temperature | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
*175°C for BARC baking | |||
*130°C for positive tone resist soft baking and post exposure baking | |||
*100°C for negative tone resist soft baking and post exposure baking | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Substrate size | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
*100 mm wafers | |||
*150 mm wafers | |||
*200 mm wafers | |||
|- | |||
| style="background:LightGrey; color:black"|Allowed materials | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
*Silicon (with oxide, nitride, or metal films or patterning) | |||
*Glass (borosilicate and quartz) | |||
*III-V materials | |||
|- | |||
|style="background:LightGrey; color:black"|Batch | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
1 - 25 | |||
|- | |||
|} | |||
<br clear="all" /> | |||
== DUV Stepper FPA-3000EX4 from Canon == | == DUV Stepper FPA-3000EX4 from Canon == | ||