Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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==A rough overview of the performance of the RIE´s and some process related parameters== | ==A rough overview of the performance of the RIE´s and some process related parameters== | ||
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Revision as of 15:55, 19 December 2007
The ASE
The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process.
The Bosch process: Etching of silicon
The Bosch process uses alternation between an etch cycle and a passivation cycle. Introducing a passivation step in an etch process is very beneficial for the control of the angle of the sidewalls in the etch process because it allows us to cover them with a protective layer that suppresses the isotropic etching. Combined with the high plasma density in the ICP chamber, the excellent sidewall control enables us to etch high aspect ratio structures in silicon with very high etch rates.
In the case of the silicon etching on the ASE, an etch phase with SF6 and O2 alternates with a passivation phase with C4F8.
Purpose | Dry etch of |
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Performance | Etch rates |
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. | Anisotropy |
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Process parameter range | Process pressure |
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. | Gas flows |
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Substrates | Batch size |
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. | Substrate material allowed |
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. | Possible masking material |
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