Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
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* '''Deepetch''': The deep etch process will etch a 50 µm opening down to make a 300 µm trench. | * '''Deepetch''': The deep etch process will etch a 50 µm opening down to make a 300 µm trench. | ||
The standardization procedure on the ASE covers these two etches. | The standardization procedure on the ASE covers these two etches. | ||
== Quality control procedure on the ASE== | |||
{| border="1" cellspacing="2" cellpadding="2" colspan="3" | |||
|bgcolor="#98FB98" |'''Quality Control (QC) for ASE''' | |||
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*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1389&mach=18 The QC procedure for RIE1 and RIE2]<br> | |||
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=18 The newest QC data for RIE1]<br> | |||
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=19 The newest QC data for RIE2] | |||
{| {{table}} | |||
| align="center" | | |||
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:200px" | |||
! QC Recipe: | |||
! OH_POLYA | |||
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| SF<sub>6</sub> flow | |||
|32 sccm | |||
|- | |||
|O<sub>2</sub> flow | |||
|8 sccm | |||
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|Pressure | |||
|80 mTorr | |||
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|RF-power | |||
|30 W | |||
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|Etch Load | |||
|50% | |||
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|} | |||
| align="center" valign="top"| | |||
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px" | |||
!QC limits | |||
!RIE1 | |||
!RIE2 | |||
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|Etch rate in Si | |||
|0.2 - 0.6 µm/min | |||
|0.2 - 0.6 µm/min | |||
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|Non-uniformity | |||
|2 - 5 % | |||
|2 - 5 % | |||
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== Recipes on the ASE == | == Recipes on the ASE == | ||