Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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*Silicon wafers (new or RCA cleaned wafers) | *Silicon wafers (new or RCA cleaned wafers) | ||
*From A2 furnace directly (e.g. incl. Predep HF) | *From A2 furnace directly (e.g. incl. Predep HF) | ||
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!style="background:silver; color:black;" align="center"|Purpose | |||
|style="background:LightGrey; color:black"|Doping of boron | |||
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!style="background:silver; color:black" align="center"|Performance | |||
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Look at the process knowlege | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | |||
|style="background:LightGrey; color:black"|Process Temperature | |||
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*900-1150 <sup>o</sup>C | |||
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|style="background:LightGrey; color:black"|Process pressure | |||
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*1 atm | |||
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|style="background:LightGrey; color:black"|Gasses on the system | |||
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*Ar, N<sub>2</sub> | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
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*1-12 4" wafer (or 2" wafers) per run | |||
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| style="background:LightGrey; color:black"|Substrate material allowed | |||
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*Silicon wafers (new from the box or RCA cleaned) | |||
*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group]. | |||
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