Specific Process Knowledge/Lithography: Difference between revisions
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!width="16%"| [[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]] | !width="16%"| [[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]] | ||
!width="16%"| [[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]] | !width="16%"| [[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]] [[Image:section under construction.jpg|70px]] | ||
!width="16%"| [[Specific Process Knowledge/Lithography/EBeamLithography|E-beam Lithography]] | !width="16%"| [[Specific Process Knowledge/Lithography/EBeamLithography|E-beam Lithography]] | ||
!width="16%"| [[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]] | !width="16%"| [[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]] [[Image:section under construction.jpg|70px]] | ||
!width="16%"| [[Specific Process Knowledge/Lithography/3DLithography|2-Photon Polymerization Lithography]] | !width="16%"| [[Specific Process Knowledge/Lithography/3DLithography|2-Photon Polymerization Lithography]] [[Image:section under construction.jpg|70px]] | ||
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Revision as of 13:56, 18 September 2013

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography |
E-beam Lithography | Nano Imprint Lithography |
2-Photon Polymerization Lithography | |
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Pattern transfer via electron beam | ||
| Pattern size range |
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| Resist type |
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| Resist thickness range |
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| Typical exposure time |
2s-30s pr. wafer |
?-? pr. ? |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
? pr. wafer |
? pr. µm2 |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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