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Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

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Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
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*Etch of Silicon in 28 wt% KOH
*Etch of Silicon in 28 wt% KOH
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*Etch of Silicon in 28 wt% KOH saturated with IPA
*Etch of Silicon in 28 wt% KOH  
The bath is dedicated wafer with electroplated Nickel or otherwise dirty wafers
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*Etch of Silicon in user mixed KOH
*Etch of Silicon in user mixed KOH
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*1.3 µm/min (80 °C)
*1.3 µm/min (80 °C)
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*0.7 µm/min (70 °C)
*0.4 µm/min (60 °C)
*0.2 µm/min (70 °C) for Boron doped Si (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>)
*1.3 µm/min (80 °C)
Etch rates might vary due to contamination of KOH bath
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*Somewhat lower than in the dedicated baths. Approximately 1 µm/min @ 80 °C in 28 wt%
*Somewhat lower than in the dedicated baths. Approximately 1 µm/min @ 80 °C in 28 wt%
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*Typical: 100-600 Å
*Typical: 100-600 Å
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*May form hillocks (pyramidal)
*May be high due to contamination and poor controlled concentration of bath
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*Typical worse than KOH2 and KOH3
*Typical worse than KOH2 and KOH3
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*The etch rate is very dependent on the crystal orientation of the silicon.
*The etch rate is very dependent on the crystal orientation of the silicon.
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*With IPA some crystal planes etches at a slower rate than for KOH without IPA.  
*The etch rate is very dependent on the crystal orientation of the silicon.  
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*The etch rate is very dependent on the crystal orientation of the silicon.
*The etch rate is very dependent on the crystal orientation of the silicon.
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