Specific Process Knowledge/Thin film deposition/Wordentec: Difference between revisions

Revision as of 11:54, 19 December 2007

Wordentec QCL 800

Wordendec: positioned in cleanroom 4 in the Wordentec room

The Wordentec is a machine for:

Deposition of metal through E-beam deposition
Deposition of metal through thermal evaporation
Deposition of materials through DC sputtering
Cleaning of samples before deposition through Argon RF sputter clean

The Wordentec is designed to deposit on 1-6 samples in sequence, samples of a size up to 6" in diameter. Adaptors exist for deposition on 2", 4" and 6" wafers, but deposition is possible on samples of almost any size and shape, as long as they do not exceed the size of a 6" substrate. The Wordentec supports either single sample deposition on each sample or batch deposition on six wafers in sequence. It is possible to freely combine processes from the machines different sources.

Process information

The metals available for E-beam evaporation and their standard deposition rates are:

Metal	Deposition rate [Å/s]
Titanium (Ti)	10
Chromium (Cr)	10
Aluminium (Al)	10
Nickel (Ni)	10
Platinum (Pt)	10
Gold (Au)	10

Thermal evaporation materials

We currently only have Aluminium available to deposit through thermal evaporation

Sputter materials

It is possible to sputter deposit almost any material, provided that it is possible to deposit with DC sputtering. The materials available currently are:

TiW alloy (10%/90% by weight)
Aluminium (Al)
Chromium (Cr)
Titanium (Ti)

A rough overview of the performance of Wordentec and some process related parameters

Purpose	Deposition of metals	E-beam evaporation Sputtering Thermal evaporation
Performance	Film thickness	~10Å - 1µm
.	Deposition rate	~2.5Å/s - 15Å/s
Process parameter range	Process Temperature	Less than 80 $_{o}$ C
.	Process pressure	~3x10^-7 - 4x10^-6 mbar
Substrates	Batch size	24x2" wafers or 6x4" wafers or 6x6" wafers Deposition on one side of the substrate
.	Substrate material allowed	Silicon wafers Quartz wafers Pyrex wafers
.	Material allowed on the substrate	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Any metals

@@ Line 72: / Line 72: @@
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*Approximately room temperature
+*Less than 80 <math>_o</math>C
 |-
 |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*~10<sup>-6</sup> - 10<sup>-5</sup> mbar
+*~3x10<sup>-7</sup> - 4x10<sup>-6</sup> mbar
 |-
 !style="background:silver; color:black" align="left"|Substrates