Specific Process Knowledge/Thin film deposition: Difference between revisions
| Line 57: | Line 57: | ||
===Alloys=== | ===Alloys=== | ||
*TiW alloy (10%/90% by weight) | *[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) | ||
=== Polymers === | === Polymers === | ||
Revision as of 11:46, 20 December 2007
Choose material to deposit
Dielectrica
- Silicon Nitride - Silicon nitride and silicon oxynitride
- Silicon Oxide
Metals/elements
|
Period/Group |
IVB | VB | VIB | VIIIB | IB | IIIA | IVA |
| 3 | . | . | . | . | . | 13 Al Aluminium | 14 Si Silicon |
| 4 | 22 Ti Titanium | . | 24 Cr Chromium | 28 Ni Nickel | 29 Cu Copper | . | . |
| 5 | . | . | . | 46 Pd Palladium | 47 Ag Silver | . | 50 Sn Tin |
| 6 | . | 73 Ta Tantalum | 74 W Tungsten | 78 Pt Platinum | 79 Au Gold | . | . |
Alloys
- TiW alloy (10%/90% by weight)
Polymers
- SU8
- Antistiction coating
- Topas
- PMMA
Choose deposition equipment
- Alcatel - E-beam evaporator and sputter tool
- Lesker - Sputter tool
- Leybold - E-beam evaporator and multiple wafer tool
- Wordentec - E-beam evaporator, sputter and thermical evaporator
- Hummer - Gold sputtering system
- PECVD - Plasma Enhanced Chemical Vapor deposition
- B2 Furnace LPCVD Nitride - Deposition of silicon nitrid
- B3 Furnace LPCVD TEOS - Deposition of silicon oxide
- B4 Furnace LPCVD PolySilicon - Deposition of polysilicon
- MVD - Molecular Vapor Deposition