Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch: Difference between revisions

Revision as of 07:31, 29 August 2013

Acceptance test for Au etch:

.	Acceptance Criteria	Acceptance Results
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	.
Material to be etched	E-beam deposited Au	.
Mask information	E-beam resist mask: 400nm of spin coated ZEP520A e-beam resist Patterned by E-beam lithography	.
Features to be etched	300nm - 3µm dots and lines + a square of 200µmx200µm	.
Etch depth	300nm	~272 nm
Etch rate	>80nm/min	54.5nm/min +- 0.6nm/min (one standard deviation)
Etch rate uniformity	<+-2%	+-(0.2% +-0.2%)
Reproducibility	<+-2%	+-0.9%
Selectivity (Au etch rate/ZEP etch rate)	At least 1:1	1.2:1
Etch profile	70-90dg.	75dg

s18-Au-ZEP3	s18-Au-ZEP5

by bge@danchip.dtu.dk

Work has been started to find a good process for etching gold with a Titanium mask with high selektivity.

	Ti etch test with Zep520A as mask - To etch the Ti mask	Au etch test with high selectivity to Ti
Generel description	This recipe has a good selectivity between ZEP520A resist and Ti, which makes it good for pattering the Ti that should be used as masking layer for the Au etch. It can also be used to for Au etch if the selektivity to the mask is good enough	This recipe has especially good selectivity between Ti and Au which makes it good for gold etching using a thin Ti mask as masking layer. The selectivity to resist is very bad so do not use it with a resist mask.
Recipe name	test Ti acceptance 20111129	Au_acceptance_with_O2
IBE parameters	A B C	A
Results
Etch rate in resist	12.8nm/min (15-12-2011)	72nm/min (13-12-2011)
Etch rate in Au	32.7nm/min (15-12-2011)	42.6nm/min (13-12-2011)
Etch rate in Ti	8.3nm/min (15-12-2011)	4.3nm/min (13-12-2011)
Selectivity Ti/Zep	0.65 (15-12-2011)	0.06 (13-12-2011)
Selectivity Au/Ti	3.9nm/min (15-12-2011)	9.9nm/min (13-12-2011)

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 ==IBE Au etch with Ti mask   [[Image:section under construction.jpg|70px]] ==
+''by bge@danchip.dtu.dk''
 Work has been started to find a good process for etching gold with a Titanium mask with high selektivity.
@@ Line 135: / Line 136: @@
 |-style="background:WhiteSmoke; color:black"
 !Generel description
-|Generel description - method 1
+|This recipe has a good selectivity between ZEP520A resist and Ti, which makes it good for pattering the Ti that should be used as masking layer for the Au etch. It can also be used to for Au etch if the selektivity to the mask is good enough
-|Generel description - method 2
+|This recipe has especially good selectivity between Ti and Au which makes it good for gold etching using a thin Ti mask as masking layer. The selectivity to resist is very bad so do not use it with a resist mask.
 |-