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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch: Difference between revisions

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[[image:IBE acceptance S18-AU-ZEP5.jpg|450x450px|thumb|center|s18-Au-ZEP5]]
[[image:IBE acceptance S18-AU-ZEP5.jpg|450x450px|thumb|center|s18-Au-ZEP5]]
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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=




==IBE Au etch with Ti mask==
==IBE Au etch with Ti mask==
Work has been started to find a good process for etching gold with a Titanium mask with high selektivity.
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![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|Method 1]]
![[Specific Process Knowledge/Thin film deposition/PECVD|Method 2]]
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!Generel description
|Generel description - method 1
|Generel description - method 2
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*A
*B
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*A
*B
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!Parameter 2
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*A
*B
*C
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*A
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!Substrate size
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*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
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*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
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|-
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
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*Allowed material 1
*Allowed material 2
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*Allowed material 1
*Allowed material 2
*Allowed material 3
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Revision as of 13:40, 28 August 2013

Results from the acceptance test in February 2011

Acceptance test for Au etch:

. Acceptance Criteria

Acceptance Results

Substrate information
  • 50 mm SSP Si wafer
  • 525 µm thick
  • Supplied by Danchip
 .
Material to be etched
  • E-beam deposited Au
 .
Mask information
  • E-beam resist mask:
  1. 400nm of spin coated ZEP520A e-beam resist
  2. Patterned by E-beam lithography
 .
Features to be etched
  • 300nm - 3µm dots and lines + a square of 200µmx200µm
 .
Etch depth
  • 300nm
  • ~272 nm
Etch rate
  • >80nm/min
  • 54.5nm/min +- 0.6nm/min (one standard deviation)
Etch rate uniformity
  • <+-2%
  • +-(0.2% +-0.2%)
Reproducibility
  • <+-2%
  • +-0.9%
Selectivity (Au etch rate/ZEP etch rate)
  • At least 1:1
  • 1.2:1
Etch profile
  • 70-90dg.
  • 75dg

Process parameters for the acceptance test

Parameter Au etch acceptance
Neutalizer current [mA] 550
RF Power [W] 1300
Beam current [mA] 500
Beam voltage [V] 600
Beam accelerator voltage 400
Ar flow to neutralizer [sccm] 5.0
Ar flow to beam [sccm] 10.0
Rotation speed [rpm] 20
Stage angle [degrees] 30



Some SEM profile images of the etched Au

s18-Au-ZEP3
s18-Au-ZEP5


THIS PAGE IS UNDER CONSTRUCTION

IBE Au etch with Ti mask

Work has been started to find a good process for etching gold with a Titanium mask with high selektivity.

Method 1 Method 2
Generel description Generel description - method 1 Generel description - method 2
Parameter 1
  • A
  • B
  • A
  • B
Parameter 2
  • A
  • B
  • C
  • A
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3


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