Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions
| Line 17: | Line 17: | ||
*[[/IBE process trends|Some general process trends]] | *[[/IBE process trends|Some general process trends]] | ||
*Results from the acceptance test: | *Results from the acceptance test: | ||
**[[/IBE Au etch|Au etch with zep520A as masking material]] | **[[/IBE Au etch#Results from the acceptance test in February 2011|Au etch with zep520A as masking material]] | ||
**[[/IBE Ti etch|Ti etch with zep 520A as masking material]] | **[[/IBE Ti etch|Ti etch with zep 520A as masking material]] | ||
*[[/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe]] | *[[/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe]] | ||