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Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Restrictions
!Restrictions
|~100 nm/min (Pure Al)
|Wafers have to be cleaned in 7UP or RCA before further processing.
|~60 nm/min
|No wafers with metal are allowed in this bath
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub>  1:2
|Wafers have to be cleaned in 7UP or RCA before further processing.
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub>  1:2
|Only for wafers with phosphor glass or boron glass that comes directly from one of the furnaces in stack A.
|Etch of pure aluminium
|None
|Etch of pure aluminium
|None
|-
|-
|}
|}
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