Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
| Line 316: | Line 316: | ||
|1-25 wafers at a time | |1-25 wafers at a time | ||
|1-25 wafer at a time | |1-25 wafer at a time | ||
| | |1-25 wafers at a time | ||
| | |1-25 wafers at a time | ||
| | |1-25 wafers at a time | ||
| | |1-7 wafers at a time | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Size of substrate | !Size of substrate | ||
|4" wafers | |2"-4" wafers | ||
|4" wafers | |2"-4" wafers | ||
| | |2"-6" wafers | ||
| | |2"-6" wafers | ||
| | |2"- 4" wafers or any that fits in a dedicated holder | ||
|2"- 4" wafers or any that fits in a dedicated holder | |||
|- | |- | ||
| Line 335: | Line 335: | ||
!Allowed materials | !Allowed materials | ||
| | | | ||
*Silicon | *Silicon | ||
*Poly Silicon | |||
*Silicon Oxide | *Silicon Oxide | ||
*Silicon Nitride | *Silicon Nitride | ||
| Line 343: | Line 343: | ||
*E-beam resist | *E-beam resist | ||
| | | | ||
*Silicon | *Silicon | ||
*Poly Silicon | |||
*Silicon Oxide | *Silicon Oxide | ||
*Silicon Nitride | *Silicon Nitride | ||
| Line 350: | Line 350: | ||
*Photoresist | *Photoresist | ||
*E-beam resist | *E-beam resist | ||
| | | | ||
| | *Silicon | ||
| | *Poly Silicon | ||
| | *Silicon Oxide | ||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
| | |||
*Silicon | |||
*Poly Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
| | |||
*All materials | |||
| | |||
*All materials | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||