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| |-style="background:WhiteSmoke; color:black"
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| !General description
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| |Etch of pure aluminium
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| |Etch of aluminium + 1.5% Si
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| |Etch of pure aluminium
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| |Etch of pure aluminium
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| |Etch of pure aluminium
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| |Etch of pure aluminium
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| |-
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| |-style="background:LightGrey; color:black"
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| !Link to safety APV and KBA
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| |[ see APV here]
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| [http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here]
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| |[ see APV here]
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| [http://kemibrug.dk/KBA/CAS/106779/?show_KBA=1&portaldesign=1 see KBA here]
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| |[ see APV here]
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| [http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here]
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| |[ see APV here]
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| [http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here]
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| |Etch of pure aluminium
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| |Etch of pure aluminium
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| |-style="background:WhiteSmoke; color:black"
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| !Chemical solution
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| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2
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| |PES 77-19-04
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| 77 vol% H<sub>3</sub>PO<sub>4</sub> 85%
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| 19 vol% CH<sub>3</sub>COOH 100%
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| 4 vol% HNO<sub>3</sub> 70%
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| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2
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| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2
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| |Etch of pure aluminium
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| |Etch of pure aluminium
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| |-
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| |-style="background:LightGrey; color:black"
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| !Process temperature!
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| |50 <sup>o</sup>C
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| |20 <sup>o</sup>C
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| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2
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| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2
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| |Etch of pure aluminium
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| |Etch of pure aluminium
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| |-
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| |-style="background:WhiteSmoke; color:black"
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| !Possible masking materials!
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| |Photoresist (1.5 µm AZ5214E)
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| |Photoresist (1.5 µm AZ5214E)
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| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2
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| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2
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| |Etch of pure aluminium
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| |Etch of pure aluminium
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| |-
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| |-style="background:LightGrey; color:black"
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| !Etch rate
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| |~100 nm/min (Pure Al)
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| |~60 nm/min
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| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2
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| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2
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| |Etch of pure aluminium
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| |Etch of pure aluminium
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| |-
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| |-style="background:WhiteSmoke; color:black" | | |-style="background:WhiteSmoke; color:black" |
| !Batch size! | | !Batch size! |
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| *Photoresist | | *Photoresist |
| *E-beam resist | | *E-beam resist |
| | |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 |
| | |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 |
| | |Etch of pure aluminium |
| | |Etch of pure aluminium |
| | |- |
| | |-style="background:LightGrey; color:black" |
| | !Restrictions |
| | |~100 nm/min (Pure Al) |
| | |~60 nm/min |
| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | | |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 |
| |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | | |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 |
