Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
| Line 297: | Line 297: | ||
<br clear="all" /> | <br clear="all" /> | ||
===Comparing different BHF baths=== | |||
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | |||
|- | |||
|-style="background:silver; color:black" | |||
! | |||
! BHF in Cleanroom3 (KOH bench 1+2) | |||
! BHF clean in Cleanroom3 | |||
! BHF in Cleanroom4 (KOH bench 6”) | |||
! BHF in RCA Bench | |||
! BHF in PP-bath | |||
! BHF Plastic beaker | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!General description | |||
|Etch of pure aluminium | |||
|Etch of aluminium + 1.5% Si | |||
|Etch of pure aluminium | |||
|Etch of pure aluminium | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!Link to safety APV and KBA | |||
|[ see APV here] | |||
[http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here] | |||
|[ see APV here] | |||
[http://kemibrug.dk/KBA/CAS/106779/?show_KBA=1&portaldesign=1 see KBA here] | |||
|[ see APV here] | |||
[http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here] | |||
|[ see APV here] | |||
[http://kemibrug.dk/KBA/CAS/108568/?show_KBA=1&portaldesign=1 see KBA here] | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Chemical solution | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|PES 77-19-04 | |||
77 vol% H<sub>3</sub>PO<sub>4</sub> 85% | |||
19 vol% CH<sub>3</sub>COOH 100% | |||
4 vol% HNO<sub>3</sub> 70% | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!Process temperature! | |||
|50 <sup>o</sup>C | |||
|20 <sup>o</sup>C | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Possible masking materials! | |||
|Photoresist (1.5 µm AZ5214E) | |||
|Photoresist (1.5 µm AZ5214E) | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!Etch rate | |||
|~100 nm/min (Pure Al) | |||
|~60 nm/min | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Batch size! | |||
|1-25 wafers at a time | |||
|1-25 wafer at a time | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!Size of substrate | |||
|4" wafers | |||
|4" wafers | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Allowed materials | |||
| | |||
*Aluminium | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
| | |||
*Aluminium | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |||
|- | |||
|} | |||