Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
Appearance
| Line 213: | Line 213: | ||
*:[http://kemibrug.dk/KBA/CAS/106534/?show_KBA=1&portaldesign=1 see KBA here] | *:[http://kemibrug.dk/KBA/CAS/106534/?show_KBA=1&portaldesign=1 see KBA here] | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan=" | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | ||
|style="background:LightGrey; color:black"|Isotropic | |style="background:LightGrey; color:black"|Isotropic | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
| Line 239: | Line 239: | ||
*A little higher etch rates than BHF | *A little higher etch rates than BHF | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan=" | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | ||
|style="background:LightGrey; color:black"|Chemical solution | |style="background:LightGrey; color:black"|Chemical solution | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||