Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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*:[http://kemibrug.dk/KBA/CAS/106534/?show_KBA=1&portaldesign=1 see KBA here] | *:[http://kemibrug.dk/KBA/CAS/106534/?show_KBA=1&portaldesign=1 see KBA here] | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan=" | !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Isotropic | ||
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* | *Isotropic | ||
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* | *Isotropic | ||
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* | *Isotropic | ||
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* | *Isotropic | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Etch rates | ||
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* | *Wet thermal oxide:~80nm/min | ||
*PECVD1 (standard):~147nm/min | |||
*TEOS:~265nm/min | |||
*Stoichiometric Si3N4:~0.75nm/min (Morten Bo Mikkelsen, March 2013) | |||
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* | *Wet thermal oxide:~25nm/min | ||
*PECVD1 (standard):~87nm/min | |||
*TEOS:~153nm/min | |||
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* | *Boronfloat and quartz: ~3-4 μm/min | ||
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* | *A little higher etch rates than BHF | ||
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|style="background:LightGrey; color:black"| | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Chemical solution | |||
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*28 wt% mixed in the ratio | *28 wt% mixed in the ratio | ||
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*Custom made | *Custom made | ||
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|style="background:LightGrey; color:black"|Temperature | |||
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*Room temperature | |||
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*Room temperature | |||
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*Room temperature | |||
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*Room temperature | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||