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Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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*:[http://kemibrug.dk/KBA/CAS/106534/?show_KBA=1&portaldesign=1 see KBA here]
*:[http://kemibrug.dk/KBA/CAS/106534/?show_KBA=1&portaldesign=1 see KBA here]
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance
|style="background:LightGrey; color:black"|Chemical solution
|style="background:LightGrey; color:black"|Isotropic
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*28 wt% mixed in the ratio
*Isotropic
KOH:H<sub>2</sub>O - 500 g : 1000 ml
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*28 wt% mixed in the ratio
*Isotropic
KOH:H<sub>2</sub>O - 500 g : 1000 ml
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|style="background:WhiteSmoke; color:black"|
*28 wt% mixed in the ratio
*Isotropic
KOH:H<sub>2</sub>O:IPA - 500 g : 1000 ml : ?? ml
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*Custom made
*Isotropic
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|style="background:LightGrey; color:black"|Temperature
|style="background:LightGrey; color:black"|Etch rates
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*Max 80 °C (standard etch)
*Wet thermal oxide:~80nm/min
*PECVD1 (standard):~147nm/min
*TEOS:~265nm/min
*Stoichiometric Si3N4:~0.75nm/min (Morten Bo Mikkelsen, March 2013)
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*Max 80 °C (standard etch)
*Wet thermal oxide:~25nm/min
*PECVD1 (standard):~87nm/min
*TEOS:~153nm/min
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*Max 70 °C if IPA added
*Boronfloat and quartz: ~3-4 μm/min
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*Max 80 °C
*A little higher etch rates than BHF
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|style="background:LightGrey; color:black"|Etchrates in thermal SiO<sub>2</sub>
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Chemical solution
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*28 wt% mixed in the ratio
*28 wt% mixed in the ratio
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Custom made
*Custom made
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|style="background:LightGrey; color:black"|Temperature
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*Room temperature
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*Room temperature
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*Room temperature
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*Room temperature
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates