Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

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VisualWikitext

@@ Line 236: / Line 236: @@
 |-
 |style="background:LightGrey; color:black"|Allowed materials
-|style="background:WhiteSmoke; color:black"|
-*Silicon: ~0.04-0.8 µm/min
-*Silicon oxide: ~0.02-0.15 µm/min
-*Silicon (oxy)nitride: ~0.02-? µm/min
-|style="background:WhiteSmoke; color:black"|
-*Silicon: ~0.04-0.8 µm/min
-*Silicon oxide: ~0.02-0.15 µm/min
-*Silicon (oxy)nitride: ~0.02-? µm/min
-|style="background:WhiteSmoke; color:black"|
-*Silicon: ~0.04-0.8 µm/min
-*Silicon oxide: ~0.02-0.15 µm/min
-*Silicon (oxy)nitride: ~0.02-? µm/min
-|style="background:WhiteSmoke; color:black"|
-*Silicon: ~0.04-0.8 µm/min
-*Silicon oxide: ~0.02-0.15 µm/min
-*Silicon (oxy)nitride: ~0.02-? µm/min
-|-
-|style="background:LightGrey; color:black"|Masking material
 |style="background:WhiteSmoke; color:black"|
 *Silicon
@@ Line 267: / Line 249: @@
 *Silicon (oxy)nitride
 |style="background:WhiteSmoke; color:black"|
-*Silicon
+*All except for Polymers
-*Silicon oxide
+|-
-*Silicon (oxy)nitride
+|style="background:LightGrey; color:black"|Masking material
+|style="background:WhiteSmoke; color:black"|
+*Stoichiometric Si3N4
+*Silicon rich nitride SiN
+*PECVD Si3N4
+*Thermal SiO2
+|style="background:WhiteSmoke; color:black"|
+*Stoichiometric Si3N4
+*Silicon rich nitride SiN
+*PECVD Si3N4
+*Thermal SiO2
+|style="background:WhiteSmoke; color:black"|
+*Stoichiometric Si3N4
+*Silicon rich nitride SiN
+*PECVD Si3N4
+*Thermal SiO2
+|style="background:WhiteSmoke; color:black"|
+*Stoichiometric Si3N4
+*Silicon rich nitride SiN
+*PECVD Si3N4
+*Thermal SiO2
 |-
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