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Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
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*Max 80 °C (standard etch)
*Max 80 °C (standard etch)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*Max 70 °C if IPA added
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Max 80 °C
*Max 80 °C
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|style="background:LightGrey; color:black"|Chemical solution
|style="background:LightGrey; color:black"|Chemical solution
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*28 wt% mixed in the ratio
*Silicon oxide: ~0.02-0.15 µm/min
KOH:H<sub>2</sub>O - 500 g : 1000 ml
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*28 wt% mixed in the ratio
*Silicon oxide: ~0.02-0.15 µm/min
KOH:H<sub>2</sub>O - 500 g : 1000 ml
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*28 wt% mixed in the ratio
*Silicon oxide: ~0.02-0.15 µm/min
KOH:H<sub>2</sub>O:IPA - 500 g : 1000 ml : ?? ml
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*Custom made
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
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|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*1-25 wafers at a time
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*1-25 wafers at a time
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*1-25 wafers at a time
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*1-7 wafers at a time
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|-
|-
|style="background:LightGrey; color:black"|Size of substrate
|style="background:LightGrey; color:black"|Size of substrate
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*4” wafers
*Silicon oxide: ~0.02-0.15 µm/min
*6” wafers
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*4” wafers
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*4” wafers
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*2” wafers
*Silicon oxide: ~0.02-0.15 µm/min
*4” wafers
*Silicon (oxy)nitride: ~0.02-? µm/min
*Small pieces
|-
|-
|style="background:LightGrey; color:black"|Allowed materials
|style="background:LightGrey; color:black"|Allowed materials
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