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Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
Line 179: Line 179:
|style="background:LightGrey; color:black"|Anisotropy
|style="background:LightGrey; color:black"|Anisotropy
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*The etch rate is very dependent on the crystal orientation of the silicon.
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*The etch rate is very dependent on the crystal orientation of the silicon.
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*With IPA some crystal planes etches at a slower rate than for KOH without IPA.  
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*The etch rate is very dependent on the crystal orientation of the silicon.
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
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