Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

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 |style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100)
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-*0.4 µm/min (60 oC)
+*0.4 µm/min (60 °C)
-*0.7 µm/min (70 oC)
+*0.7 µm/min (70 °C)
-*1.3 µm/min (80 oC)
+*1.3 µm/min (80 °C)
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-*0.4 µm/min (60 oC)
+*0.4 µm/min (60 °C)
-*0.7 µm/min (70 oC)
+*0.7 µm/min (70 °C)
-*1.3 µm/min (80 oC)
+*1.3 µm/min (80 °C)
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-*0.7 µm/min (70 oC)
+*0.7 µm/min (70 °C)
-*0.2 µm/min (70 oC)
+*0.2 µm/min (70 °C)
-*for Boron doped Si (doping level > 5x1019 cm-3)
+*for Boron doped Si (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>)
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 *Somewhat lower than in the dedicated baths. Approximately 1 µm/min @ 80 °C in 28 wt%