Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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|style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100) | |style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100) | ||
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0.4 µm/min (60 oC) | *0.4 µm/min (60 oC) | ||
0.7 µm/min (70 oC) | *0.7 µm/min (70 oC) | ||
1.3 µm/min (80 oC) | *1.3 µm/min (80 oC) | ||
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0.4 µm/min (60 oC) | *0.4 µm/min (60 oC) | ||
0.7 µm/min (70 oC) | *0.7 µm/min (70 oC) | ||
1.3 µm/min (80 oC) | *1.3 µm/min (80 oC) | ||
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0.7 µm/min (70 oC) | *0.7 µm/min (70 oC) | ||
0.2 µm/min (70 oC) for Boron doped Si (doping level > 5x1019 cm-3) | *0.2 µm/min (70 oC) | ||
*for Boron doped Si (doping level > 5x1019 cm-3) | |||
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Somewhat lower than in the dedicated baths. Approximately | *Somewhat lower than in the dedicated baths. Approximately 1 µm/min @ 80 °C in 28 wt% | ||
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|style="background:LightGrey; color:black"|Etch rates in Thermal SiO2 | |style="background:LightGrey; color:black"|Etch rates in Thermal SiO2 | ||