Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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*Silicon (oxy)nitride: ~0.02-? µm/min | *Silicon (oxy)nitride: ~0.02-? µm/min | ||
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|style="background:LightGrey; color:black"| | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | ||
|style="background:LightGrey; color:black"|Temperature | |||
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*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
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|style="background:LightGrey; color:black"|Chemical solutions | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon: ~0.04-0.8 µm/min | *Silicon: ~0.04-0.8 µm/min | ||
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*Silicon (oxy)nitride: ~0.02-? µm/min | *Silicon (oxy)nitride: ~0.02-? µm/min | ||
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